Photolithography with Shipley 1813 for 1 micron line resolution

1. Spin S1813 at 5000 rpm, 2500 r/s, for 45 seconds -> 1.2 micron (apply HMDS before PR coating, if necessary)
2. Softbake on leveled hot plate for 75 seconds @ 115C.
3. Align wafer using MA6 (Hard Contact, Al. Gap 30 microns)
4. Expose (Wavelength @ 436nm, intensity @ 20 mW [CI2]) for 4 seconds
5. Develop using MF319 for 45 seconds
6. Inspect the photoresist pattern
7. Hardbake in oven for 30 minutes @ 120C, if needed.